r semiconductor LL101A thur ll101c small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics for general purpose applications the ll101 series is a metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications these diodes are also available in the do-35 case with the type designation sd101a to sd101c. reverse breakover voltage at i =10ma r leakage current at v =50v r v =40v v =30v r r forward voltage drop at i =1ma f 200 200 200 2.0 2.1 2.2 0.41 0.4 0.39 1 1 0.95 0.9 i =15ma f reverse recovery time at i =i =5ma,recover to 0.1 r fr i junction capacitance at v =0v ,f=1mhz r v rrm vrrm v rrm vrrm v rrm vrrm mw a v v t stg p tot t j power dissipation (infinite heat sink) peak reverse voltage storage temperature range junction temperature maximum single cycle surge 10ms square wave LL101A LL101A LL101A LL101A LL101A LL101A ll101b ll101b ll101b ll101b ll101b ll101b ll101c ll101c ll101c ll101c ll101c ll101c -55 to+150 v v v v v v v v v na na na pf pf pf ns i fsm v f v f v f v f v f v f i r i r i r c j c j c j t rr 125 2.0 400 1) 60 60 50 50 40 40 1) valid provided that electrodes are kept at ambient temperature symbols units value min. typ. max. unis symbols case: minimelf glass case(sod-80 ) polarity: color band denotes cathode end weight: approx. 0.05 gram minimelf dimensions in inches and (millimeters) 0.142(3.6) 0.126(3.2) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) high temperature soldering guaranteed 260 c 10 seconds at terminals :/ component in accordance to rohs 2011 65 eu // c c (ratings at 25 c ambient temperature unless otherwise specified) jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-1
ratings and characteristic curves LL101A thr ll101c u figure 1. typical variation of forward. current vs.fwd. voltage for primary conduction through the schottky barrier figure 2. typical forward conduction curve of combination schottky barrier and pn junction guard ring figure 4. typical capacitance curve as a function of reverse voltage 0 0 0.01 0.01 2 2 2 2 2 2 2 5 5 5 5 5 5 5 0.1 0.1 1 1 10 10 100 20 40 60 80 0.5 0.5 1v 1v 100 2 ma ma pf v f v r v r v f i f i r c i f a b c a a b b c c 0 0 1 10 10 20 20 30 30 40 40 5v 0 5v 0 a 25 c 50 c 75 c 100 c 125 c 150 c figure 3.typical variation of reverse current at versus temperature jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-2
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